Physical Properties

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Ideal Conductivity

Silicon is a naturally occurring element in the earth’s crust. Its conductivity properties make it an ideal semiconducting material, and it is the primary material used in semiconductor wafers up to 300 mm in diameter.

The polycrystalline silicon in SiFusion is elemental silicon in a non-oriented crystalline form.

Identification	Silicon
Symbol	Si
State (std. cond.)	Solid
Atomic	28.086
Melting point, °C	1,414
Boiling point, °C	2,878
Critical temperature, °C	4,886
Critical pressure, atm	530
Critical volume, cm3/gmol	232.6
Critical density, g/cm3	0.1207
Vapor pressure, mm Hg	2.8(10^-4) (at m.p.)
Heat of vaporization, cal/g	3,812 (at m.p.)
Heat of sublimation, cal/g	4,705 (at m.p.)
Heat of fusion, cal/g	264 (at m.p.)
Liquid heat cap., cal/g mol °C	6.755 (at m.p.)
Solid heat cap., cal/g mol °C	4.78 (at 25°C)
Solid heat Cap., JKg/m mol (at 25°C)	703
Liquid density	2.533 (at m.p.)
Solid density	2.329 (at 25°C)
Percent expansion on freezing	10% (at m.p.)
Surface T	736 (at m.p.)
Liquid viscosity	0.88 (at m.p.)
Liquid thermal cond., cal/sec cm°C	1.025 (10^-3) (at m.p.)
Solid thermal cond., cal/sec cm°C	0.353 (at 25°C)
Solid thermal cond., W/m	163
Hardness, knops Kg/mm	1150
Hardness, mobs	7
Bulk modules, dyne/cm2	9.8 (10¹¹)
Bulk modules, Gpa	102
Young modulus, dyne/cm2	1.3 (10¹²)
Young modulus, Gpa	131
Coefficient of thermal expansion m/°C	2.6 (10^-6)
Specific heat, cal/g °C	0.18
Atomic density, atom cm2	4.96 (10²²)
Refractive index, 4u	3.4255
dn/dt °C	1.6 (10^-4)
Percent transmission uncoated, 4u	53.8
Transmission range, u	1.2-7 & 45-100
Dielectric	11.8
Elastic constant, C11 dyne/cm2	1.656 (10¹²)
Elastic constant, C12 dyne/cm2	0.639 (10¹²)
Elastic constant, C14 dyne/cm2	0.795 (10¹²)
Rupture modules, bending, kg/cm2	700-3,500
Breaking strength, compression kg/cm2	4,900-5,600
Breaking strength, compression Mpa	120
Poisson ratio	0.28

Identification

Silicon

Symbol

State (std. cond.)

Solid

Atomic

28.086

Melting point, °C

1,414

Boiling point, °C

2,878

Critical temperature, °C

4,886

Critical pressure, atm

530

Critical volume, cm3/gmol

232.6

Critical density, g/cm3

0.1207

Vapor pressure, mm Hg

2.8(10^-4) (at m.p.)

Heat of vaporization, cal/g

3,812 (at m.p.)

Heat of sublimation, cal/g

4,705 (at m.p.)

Heat of fusion, cal/g

264 (at m.p.)

Liquid heat cap., cal/g mol °C

6.755 (at m.p.)

Solid heat cap., cal/g mol °C

4.78 (at 25°C)

Solid heat Cap., JKg/m mol (at 25°C)

703

Liquid density

2.533 (at m.p.)

Solid density

2.329 (at 25°C)

Percent expansion on freezing

10% (at m.p.)

Surface T

736 (at m.p.)

Liquid viscosity

0.88 (at m.p.)

Liquid thermal cond., cal/sec cm°C

1.025 (10^-3) (at m.p.)

Solid thermal cond., cal/sec cm°C

0.353 (at 25°C)

Solid thermal cond., W/m

163

Hardness, knops Kg/mm

1150

Hardness, mobs

Bulk modules, dyne/cm2

9.8 (10¹¹)

Bulk modules, Gpa

102

Young modulus, dyne/cm2

1.3 (10¹²)

Young modulus, Gpa

131

Coefficient of thermal expansion m/°C

2.6 (10^-6)

Specific heat, cal/g °C

0.18

Atomic density, atom cm2

4.96 (10²²)

Refractive index, 4u

3.4255

dn/dt °C

1.6 (10^-4)

Percent transmission uncoated, 4u

53.8

Transmission range, u

1.2-7 & 45-100

Dielectric

11.8

Elastic constant, C11 dyne/cm2

1.656 (10¹²)

Elastic constant, C12 dyne/cm2

0.639 (10¹²)

Elastic constant, C14 dyne/cm2

0.795 (10¹²)

Rupture modules, bending, kg/cm2

700-3,500

Breaking strength, compression kg/cm2

4,900-5,600

Breaking strength, compression Mpa

120

Poisson ratio

0.28

Physical Properties of Silicon

Ideal Conductivity

Physical Properties of Silicon

SiFusion furnaceware is clean to <1.0 E10 / cm2 for all trace metals.

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