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6.0″ Wafer Stage Substrate Heater
Part Number: SU-600-IH
Description
China Advanced Ceramic MeiVac 6.0″ diameter wafer stage substrate heater is configured for wafer applications. Like other members of the MeiVac substrate heater product line, it delivers superior uniformity and has been used for many R&D applications where reliability is critical. It is designed to operate under rigorous conditions and is both UHV and O2 compatible.
MeiVac wafer substrate heaters are made of Inconel metal and are wafer size specific. Wafer pockets are machined into the surface of the heater blocks. Note that Inconel is NOT compatible with silver thermal paste.
Features
- 6.0” Wafer Heater
- Maximum Temperature 950° C
- Oxygen Compatible
- UHV Compatible
- Excellent Temperature Uniformity
Dimensional Specifications
Dimension |
Inches
|
A |
O 6.75
|
B |
7.38
|
C |
3.3
|
D |
3
|
E |
2.3
|
Operating Specifications (example at 1 atm pressure)
Temperature Uniformity |
+/- 2%
|
Temperature Repeatability |
13C
|
Ramp Time to 600C |
8 min.
|
Ramp Time to 950C |
30 min.
|
Cool-down Time to Room Temp |
4 hrs
|
Max Current |
14 A
|
Max Voltage |
135V
|
Heater Resistance (typical) |
10 ohms
|
Power Supply |
AC/DC
|
Ordering
Ordering Information for Model SU-600-IH
If you have questions about pricing and availability, need more information about China Advanced Ceramic MeiVac Vari-Q throttle valve model SU-600-IH, or if you have other requirements, you can submit your request using the form or contact your China Advanced Ceramic
representative directly.
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Model Number SU-600-IH
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